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1. Field of the Invention
The present invention relates to an apparatus and a method for producing a semiconductor device using a process for forming a film on a substrate and for peeling off the film.
2. Description of the Related Art
In recent years, with the progress in miniaturization of semiconductor elements, a necessity for miniaturization of a film forming and etching apparatus, as well as miniaturization of wafers that are used for a semiconductor device, has been rising.
A semiconductor device, such as a transistor, is produced by forming a film on a substrate and etching the film by means of a dry etching apparatus. The dry etching apparatus has a treatment chamber which houses semiconductor wafers on top of a wafer carrier. The treatment chamber and the wafer carrier are connected to each other through an opening at a ceiling of the treatment chamber. Inside the treatment chamber, an evacuating gas and dry etching gas are introduced while a pressure inside the treatment chamber is reduced to vacuum. For a dry etching, gas is evacuated from inside the treatment chamber and then dry etching gas is introduced.
In recent years, however, as the film forming and etching apparatus has become smaller, evacuation of the gas inside the treatment chamber of the apparatus has become difficult. When the pressure inside the treatment chamber is reduced to vacuum, the pressure of the gas inside the treatment chamber becomes positive.
In a gas inside the treatment chamber, electrons are lost during evacuation thereof. Positive ions inside the treatment chamber become negative ions. Such positive ions move by a force of a static electricity generated by a difference in potential between the treatment chamber and the gas. Consequently, positive ions may be attracted and accumulated at a wall of the treatment chamber.
When positive ions are accumulated on the wall of the treatment chamber, the positive ions hit against the wall of the treatment chamber. Such a hit breaks the wall of the treatment chamber. As a result, the vacuum inside the treatment chamber cannot be maintained and the apparatus malfunctions.
To prevent such malfunction, Japanese Laid-Open Patent Publication No. 5-227445 has proposed a technique for evacuating the gas from inside the treatment chamber of the apparatus to reduce the pressure inside the treatment chamber to vacuum. In 0b46394aab